, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 jl BFS22A v.h.f. power transistor n-p-n epitaxial planar transistor intended for use in class-a, b and c operated mobile, industrial and military transmitters with a supply voltage of 13,5 v. the transistor is resistance stabilized. every tran- sistor is tested under severe load mismatch conditions with a supply over-voltage to 16,5 v. it has a to-39 metal envelope with the collector connected to the case. quick reference data r.f. performance up to tmt, ? 25 c in an unneutralized common-emitter class-b circuit mode of operation c.w. c.w. vce v 13,5 12,5 f mhz 175 175 pl w 4 4 gp db > 8 typ.8 i? % > 60 typ. 60 z| si 3,9 + j2,2 ? vi ms 37 - j22 ? mechanical data fig.1 to-39/1; collector connected to case. dimensions in mm -?h \e ??.,? - mm maximum lead diameter is guaranteed only for 12,7 mm. accessories: 56245 (distance disc). .semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice int'nrmution lurrmhtd by nj somi-c unduclort n believed to he hold accurate ami reliable .it the lime of guing to press. however m - esptnuibility fat my errors or omissions discovered in its use m scim-iuikltiui rs cr fit vrrift 'h.m tt:im-;ht'^t? ir^ . tirn'nt heriire nlncinv unf^n
BFS22A iceo 5 ma v(br)cbo > v(br)ceo > v(br)ebo > 36 v 18 v 4 v e e 0.5 ms 0.5 ms ft typ. 700 mhz typ. 15 pf < 20 pf -cre typ. 11 pf v.h.f. power transistor characteristics tj = 25c unless otherwise specified collector cut-off current ib a 0; vce = 14v breakdown voltages collector -base voltage open emitter, ic = 1 nia collector -emitter voltage open base, ic = 10 ma emitter -base voltage open collector, ie = 1 nia transient energy l = 25 mh; f = 50 hz open base d. c. current gain ic = 500 ma; vce = 5 v transition frequency ic = 350 ma; vce = 10 v collector capacitance at f = 1 mhz ie = ie = 0; vcb = 15 v feedback capacitance at f = 1 mhz 1c = 50 ma; vce - is v
BFS22A ratings limitiag values in accordance with the absolute maximum system (iec 134) collector -base voltage (open emitter) vcbom max. 36 v peak value collector -emitter voltage (open base) emitter -base voltage (open collector) collector current (average) collector current (peak value) f > 1 mhz total power dissipation up to (> 1 mhz = 25 c 10 pm (wl 7.s 2.5 -h .1 -h .short tlrtio_ operation v.,s.wr>3" ^ v. k ^ 11 -h l ^ & \ p irmal op*i s.w.r.o ft *< v at * \n vce ? 16-- 1 >1mhz ** \ (? v so 100tmb(c) 150 storage temperature operating junction temperature thermal resistance from junction to mounting base from mounting base to heatsinfc with a boron nitride washer for electrical insulation vceo vebo rc(av) icm ptot max. max. max. max. max. 18 4 0.75 2.25 8 7z60973 v v a a w (ac) 0.7 0.6 0.5 oa 0.3 0.2 ni d.c.soar | v v l \c \ 5 6 7 8 9 10 vce (v) 20 stg j-mb -65 to +200 c max. 200 c 22 k/w rthmb-h = 2.5 k/w
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